Semiconductor laser elements and method for the production...

Details Semiconductor laser elements and method for the production... Semiconductor laser elements and method for the production...

H - Electricity

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H01S 5/343 (2006.01) H01S 5/20 (2006.01) H01S 5/223 (2006.01) H01S 5/34 (2006.01)

Patent

CA 2028899

A semiconductor laser element having a GaAs substrate formed thereon with an active layer of a strained quantum well construction provided with an InxGa1-xAs strained quantum well layer and a GaAs barrier layer and clad layers arranged up and down of said active layer through an epitaxial growth means. A lattice mismatching rate of the clad layer with respect to the substrate is less than 10-3.

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