Semiconductor laser having at least two radiation beams, and...

Details Semiconductor laser having at least two radiation beams, and... Semiconductor laser having at least two radiation beams, and...

H - Electricity

01

S

345/32

H01S 5/40 (2006.01)

Patent

CA 1173549

PHN 9981 22 ABSTRACT: Semiconductor laser device having a semiconduc- tor body in which two or more lasers are provided which can generate substantially parallel radiation beams of preferably different frequencies which are situated close together. According to the invention the semiconductor body comprises at least one semiconductor laser of the double heterojunction type (DH-type) comprising a plur- ality of semiconductor layers with a radiating p-n junc- tion parallel to the semiconductor layers and at least one semiconductor laser of the TJS ("Transverse Junction Stripe") type the p-n junction surface of which is trans- verse to that of the DH-laser. The device comprises a layer structure having at least two active layers each between two passive layers. One laser is formed in a mesa-shaped part (II) of the body which comprises both active layers, the other one in an adjacent part (I) in which the uppermost active layer is absent. The TJS- laser is preferably provided in the last-mentioned part (I). More than two lasers may also be provided. Appli- cation in optical telecommunication and in "direct read and write" (DRAW") systems.

398701

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