Semiconductor laser having broadband laser gain

H - Electricity – 01 – S

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H01S 5/04 (2006.01) H01S 5/10 (2006.01) H01S 5/183 (2006.01) H01S 5/30 (2006.01)

Patent

CA 1152619

- 9 - SEMICONDUCTOR LASER HAVING BROADBAND LASER GAIN Abstract of the Disclosure Broadband laser gain is obtained in semiconductor materials by pumping an ultra-short laser cavity with picosecond excitation pulses. The broadband laser gain is used to provide picosecond laser radiation energy covering a wide spectrum of frequencies.

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