H - Electricity – 01 – S
Patent
H - Electricity
01
S
H01S 5/12 (2006.01) H01S 5/14 (2006.01) H01S 5/022 (2006.01)
Patent
CA 2370359
Disclosed is a semiconductor laser module which is advantageous as a pumping source for Raman amplification because of its high optical output and excellent wavelength stability. The module comprises a Fabry-Perot semiconductor laser device to which a fiber Bragg grating having a wavelength selectivity and showing a specific reflectivity with respect to a specific wavelength is optically coupled, wherein given that a cavity length of the semiconductor laser device is L (µm), a reflection bandwidth of the fiber Bragg grating is .DELTA..lambda., (nm) and a reflectivity of said front facet is R1 (%) and a peak reflectivity of said optical feedback part is R2 (%), following equations are satisfied among L, R1 and R2 1000 µm <= L <= 3500 µm, 0.01% <= R1 + c2R2 <= 4% and R1/R2 <= 0.8 where c represents a coupling efficiency between the semiconductor laser device and the fiber Bragg grating. It is preferable that 0.2 nm <= .DELTA..lambda. <= 3 nm should be satisfied.
Aikiyo Takeshi
Koyanagi Satoshi
Tsukiji Naoki
Yoshida Junji
Smart & Biggar
The Furukawa Electric Co. Ltd
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