Semiconductor laser structure and manufacture

Details Semiconductor laser structure and manufacture Semiconductor laser structure and manufacture

H - Electricity

01

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345/32

H01S 5/20 (2006.01) H01S 5/22 (2006.01) H01S 5/02 (2006.01) H01L 33/00 (2006.01)

Patent

CA 1128634

ABSTRACT In a semiconductor laser composed of a sequence of layers forming a heterostructure diode and including a substantially homogeneously doped layer defining a laser active zone having a laser radiation exit face perpendicular to the layers, two respectively differently doped semi- conductor layers disposed at respectively opposite sides of the active zone, and means for constricting the current flowing in the forward direction of the diode to a narrow, strip-shaped region in the laser active zone, the improve- ment wherein said laser comprises a monocrystalline layer located in the layer sequence to be spaced from said active zone by one of said differently doped semiconductor layers, with the surface of said monocrystalline layer directed away from said active zone being provided with a trough-shaped recess extending essentially perpendicularly to said radiation exit face, and a doped region extending from said surface provided with said recess toward said active zone and formed by diffusion from said surface provided with said recess of a doping material which gives said doped region the same conduct- ivity type as said one of said differently doped layers, said doped region being delimited by a diffusion front substantially parallel, and corresponding in contour, to said surface pro- vided with said recess, and said diffusion front being located for providing a localized semiconductor region of a single conductivity type in the area below said recess and between said recess and said active zone, and semiconductive regions of respectively opposite conductivity types separated by said diffusion front in areas adjacent the localized region.

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