Semiconductor laser with spatial fluctuation of potential

Details Semiconductor laser with spatial fluctuation of potential Semiconductor laser with spatial fluctuation of potential

H - Electricity

01

S

345/32

H01S 5/34 (2006.01) H01S 5/042 (2006.01)

Patent

CA 1270318

Abstract: A semiconductor laser having a high efficiency of luminescence can be obtained by forming a spatial fluctuation of potential such that the potential differs from position to position in a plane perpendicular to a current flowing direction. As a result, electrons and holes or excitons formed by them can be localized, not only in the current flowing direction, but also in the perpendicular plane. For this purpose corrugations or ruggedness having a mean pitch of below 100 nm and a level difference of from 1/10 to 1/2 of the mean thick- ness of the active layer are formed on the surface of the active layer.

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