Semiconductor lasers

Details Semiconductor lasers Semiconductor lasers

H - Electricity

01

S

345/32

H01S 5/223 (2006.01) H01S 5/32 (2006.01) H01S 5/323 (2006.01) H01L 33/00 (2006.01)

Patent

CA 2008379

Abstract A semiconductor laser is characterized in that the first upper portion cladding layer is of double layer construction, the upper layer portion being higher in carrier concentration than the lower layer portion. As a result the series resistance component is restrained, and the sequential direction voltage can be lowered without damaging the other characteristics, such as the oscillation start current.

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