Semiconductor lasers comprising rare earth metal-doped diamond

Details Semiconductor lasers comprising rare earth metal-doped diamond Semiconductor lasers comprising rare earth metal-doped diamond

H - Electricity

01

S

H01S 3/16 (2006.01)

Patent

CA 2171781

In general, the semiconductor laser device of the present invention comprises an emitting element comprising a doped diamond, which is doped with atoms of at least one rare earth metal and/or molecules of at least one compound containing a rare earth metal. The semiconductor laser device assembly according to the present invention comprises an emitting element of a doped diamond, which is a diamond doped with atoms of at least one rare earth metal and/or molecules of at least one compound containing a rare earth metal, and a thermal releasing element of a substantially undoped diamond, on which the semiconductor laser device are placed.

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