Semiconductor lasers with varied quantum well thickness

Details Semiconductor lasers with varied quantum well thickness Semiconductor lasers with varied quantum well thickness

H - Electricity

01

S

H01S 5/34 (2006.01) H01S 5/183 (2006.01) H01S 5/40 (2006.01) H01L 33/00 (2006.01)

Patent

CA 2350772

An optical emission device includes a semiconductor with conduction and valence bands and a plurality of quantum wells formed in the conduction and valence bands in a multiple quantum well active region such that recombination of holes and electrons between said quantum wells results in the emission of light. At least some of the quantum wells have different characteristic emission frequenices to broaden the gain spectrum of the emitted light.

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