Semiconductor light emitting device

Details Semiconductor light emitting device Semiconductor light emitting device

H - Electricity

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H01S 3/00 (2006.01) H01L 33/00 (2006.01) H01S 5/16 (2006.01)

Patent

CA 1149498

- 23 - A SEMICONDUCTOR LIGHT EMITTING DEVICE ABSTRACT In a semiconductor light emitting device, a buried layer of a semiconductor is selectively formed in at least one of a first and a second clad layers in order to determine a light emitting region by the configuration of the buried layer of the semiconductor. The buried layer of the semiconductor has a conductivity type which is opposite to the conductivity type of the surrounding clad layer and an index of refraction which is different from the index of refraction of the surrounding clad layer.

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