Semiconductor light emitting device

Details Semiconductor light emitting device Semiconductor light emitting device

H - Electricity

01

L

H01L 33/00 (2006.01)

Patent

CA 2057977

An AlGaAs/GaAs system light emitting device comprises a GaAs substrate doped with a first conductivity type impurity, a first conductivity type AlyGa1-yAs first cladding layer, an AlxGa1-xAs (0 < x < y) active layer, and an AlyGa1-yAs second cladding layer having a conductivity type opposite to the first conductivity type, which are successively disposed on the substrate. The light emitting device further comprises an AlzGa1-zAs (z 0) buffer layer which is disposed between the GaAs substrate and the first cladding layer, to which a first conductivity impurity is doped to such a high dopant concentration that the intensity of photoluminescence light generated due to band to band transitions is reduced, and has a smaller energy band gap than the energy of the light emitted from the light emitting device. Therefore, a long lifetime semiconductor light emitting device having no sub peak in the light emission spectrum can be easily produced with good yield.

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