Semiconductor light emitting device

Details Semiconductor light emitting device Semiconductor light emitting device

H - Electricity

01

S

H01S 5/20 (2006.01) H01S 5/223 (2006.01) H01S 5/34 (2006.01) H01S 5/22 (2006.01) H01S 5/32 (2006.01) H01S 5/343 (2006.01)

Patent

CA 2328287

A semiconductor laser (200) comprises a semiconductor substrate (100), a pair of cladding layers (110, 150) formed on the substrate, a pair of undoped SCH layers (120, 140) disposed between the cladding layers (110, 150), and an active quantum well layer (130) disposed between the undoped SCH layers (120, 140). The waveguide loss of light output in leaky mode is smaller than the mode gain of the semiconductor laser because the existence of the SCH layers (120, 140) and the adequate film thickness of the cladding layers (110, 150). The laser provides low threshold current and high emission efficiency.

L'invention porte sur un laser à semi-conducteur (200) comportant; un substrat semi-conducteur (100) une paire de couches d'enrobage (110, 150) formées sur le substrat, une paire de couches SCH (120, 140) non dopées disposées entre les couches d'enrobage (110, 150); et une couche active (130) de puits quantiques disposée entre les couches SCH non dopées. Les pertes de lumière du guide d'onde en mode de fuite sont moindres que celles en mode gain du fait de la présence des couches SCH (120, 140) et de l'épaisseur adéquate des couches d'enrobage (110, 150). Ledit laser présente un faible courant de seuil et un rendement d'émission élevé.

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