Semiconductor light emitting device

Details Semiconductor light emitting device Semiconductor light emitting device

H - Electricity

01

S

345/32

H01S 3/19 (1980.01)

Patent

CA 1173550

ABSTRACT OF THE DISCLOSURE Since an ordinary semiconductor laser heretofore employed has no mechanism for stabilizing the lateral mode, the light emitting region becomes wider as current increases. That is, the lateral oscillation mode is un- stable. In the present invention, a current rejecting layer and an etch-back preventive layer are added to a semiconductor laser provided with a cladding layer composed of a projecting portion for confining light from an active layer and a portion for emitting light. The thicknesses of predetermined layers, the relationships of forbidden band widths of the layers and their conductivity type are specified. By these measures, an excellent current limit function and optical guide function can be obtained and the lateral mode can be stabilized.

443985

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