Semiconductor light emitting device

Details Semiconductor light emitting device Semiconductor light emitting device

H - Electricity

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H01L 33/00 (2006.01) C30B 19/02 (2006.01) C30B 23/02 (2006.01) H01L 21/208 (2006.01) H01S 3/18 (1990.01)

Patent

CA 1295405

ABSTRACT OF THE DISCLOSURE The semiconductor light emitting device is a light emitting diode (LED) or laser diode (LD) composed of a substrate composed of III-V group elements and GaInP system mixed crystal of III-V group mixed crystal, which comprises a III-V group substrate, a first layer mainly composed of GaInP being formed on this III-V group substrate by the yo-yo solute feeding method or Sn solvent method, and a second layer mainly composed of GaInP being formed on the first layer by a method selected from MOVPE, MBE and LPE, thereby obtaining short wavelength emission in green to yellow color.

591726

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