Semiconductor light-emitting device

Details Semiconductor light-emitting device Semiconductor light-emitting device

H - Electricity

01

L

H01L 33/02 (2010.01) H01L 33/16 (2010.01)

Patent

CA 2504023

Affords semiconductor light-emitting devices in which generation of spontaneous electric fields in the active layer is reduced to enable enhanced brightness. Semiconductor light-emitting device (1) is furnished with an n- type cladding layer (3), a p-type cladding layer (7) provided over the n-type cladding layer (3), and an active layer (5) composed of a nitride and provided in between the n-type cladding layer (3) and the p-type cladding layer (7), and therein is characterized in that the angle formed by an axis orthogonal to the interface between the n-type cladding layer (3) and the active layer (5), and the c-axis in the active layer (5), and the angle formed by an axis orthogonal to the interface between the active layer (5) and the p-type cladding layer (7), and the taxis in the active layer (5), are each greater than zero.

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