Semiconductor light-emitting device

Details Semiconductor light-emitting device Semiconductor light-emitting device

H - Electricity

01

L

H01L 33/00 (2006.01)

Patent

CA 2459554

A ZnSe light-emitting device emitting light from an output face comprises an n- type ZnSe substrate including self-active luminescence centers (SA), an active layer formed on the n-type ZnSe substrate, and an Al layer provided the opposite side to the output face and serving to reflect light toward the output face. The emitted light is effectively used, the luminance is high, and the chromaticity of the white light-emitting device can be easily adjusted.

L'invention concerne un dispositif électroluminescent à base de ZnSe émettant de la lumière à partir d'une face de sortie d'une face de sortie, comprenant un substrat ZnSe du type n doté de centres luminescents auto-actifs, une couche active formée sur le substrat ZnSe du type n, et une couche Al opposée à la face de sortie et servant à réfléchir la lumière vers ladite face de sortie. La lumière émise est effectivement utilisée, la luminance est élevée et la chromaticité du dispositif émettant une lumière blanche peut être facilement réglée.

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