H - Electricity – 01 – L
Patent
H - Electricity
01
L
H01L 33/00 (2010.01)
Patent
CA 2713070
A semiconductor light emitting device (10) comprises a semiconductor structure (12) comprising a first body (14) of a first semiconductor material (in this case Ge) comprising a first region of a first doping kind (in this case n) and a second body (18) of a second semiconductor material (in this case Si) comprising a first region of a second doping kind (in this case p). The structure comprises a junction region (15) comprising a first heterojunction (16) formed between the first body (14) and the second body (18) and a pn junction (17) formed between regions of the structure of the first and second doping kinds respectively. A biasing arrangement (20) is connected to the structure for, in use, reverse biasing the pn junction, thereby to cause emission of light.
L'invention porte sur un dispositif électroluminescent à semi-conducteur (10) qui comprend une structure semi-conductrice (12) comprenant un premier corps (14) d'un premier matériau semi-conducteur (dans ce cas Ge) comprenant une première zone d'un premier type de dopage (dans ce cas n) et un second corps (18) d'un second matériau semi-conducteur (dans ce cas Si) comprenant une première zone d'un second type de dopage (dans ce cas p). La structure comprend une zone de jonction (15) comprenant une première hétérojonction (16) formée entre le premier corps (14) et le second corps (18) et une jonction pn (17) formée entre des zones de la structure des premier et second types de dopage respectivement. Un agencement de polarisation (20) est connecté à la structure pour, lors de l'utilisation, polariser en inverse la jonction pn, et ainsi provoquer une émission de lumière.
Du Plessis Monuko
Snyman Lukas Willem
Goudreau Gage Dubuc
Insiava (pty) Limited
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