Semiconductor liquid junction photocell using surface...

Details Semiconductor liquid junction photocell using surface... Semiconductor liquid junction photocell using surface...

H - Electricity

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345/22

H01L 31/02 (2006.01) H01G 9/20 (2006.01) H01L 31/04 (2006.01)

Patent

CA 1138080

i Heller A. 9-13-1 SEMICONDUCTOR LIQUID JUNCTION PHOTOCELL USING SURFACE MODIFIED GaAs ELECTRODE Abstract of the Disclosure A semiconductor liquid junction photocell using a photoactive electrode comprising GaAs has greatly improved solar energy to electricity conversion efficiency when compared to prior art semiconductor liquid junction photocells using GaAs electrodes. The improved efficiency is obtained by material, such as ruthenium, cobalt, rhodium or lead, on the electrode surface. Efficiency is still further increased by texturizing the surface of the GaAs electrode prior to addition of the material. Efficiencies under AM1 conditions are appxoximately 12 percent.

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