Semiconductor-liquid phase epitaxial growth method

Details Semiconductor-liquid phase epitaxial growth method Semiconductor-liquid phase epitaxial growth method

H - Electricity

01

L

356/181, 345/33,

H01L 21/208 (2006.01) C30B 19/04 (2006.01) H01L 33/00 (2006.01)

Patent

CA 1041646

Abstract of the Disclosure Disclosed is a method of vielding a multilayer-liquid phase epitaxial ??owth of AlxGa1-xAs and GaAs for manufacturing a double heterostructure laser, light emitting dio?e, etc., which is charac- terized in that hydrogen gas or inert gas, containing GaCl gas, is used as an atmosphere for the epitaxial growth. The method p???its the liquid phase epitaxial growth of a semoconductor layer even on an AlxGa1-xAs (x ? 0.3) which is once exposed to the air of subjected to an etching treatment. Accordingly, this method is suitable to the manufacture of a semiconductor element having a buried active layer. This method also permits the manufacture of an epitaxial wafer having a low dislocation density.

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