Semiconductor materials

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C - Chemistry, Metallurgy

30

B

53/166, 53/167,

C30B 13/00 (2006.01) C22B 58/00 (2006.01) C30B 19/04 (2006.01)

Patent

CA 1159652

ABSTRACT OF THE DISCLOSURE A Group III element Q selected from gallium, indium and thallium containing a Group VI element .lambda. selected from oxygen, sulphur, selenium and tellurium as an impurity can be purified by adding, to molten Q, an element M capable of forming with X a stable solid compound substantially insoluble in liquid Q. The stable solid compound can be separated and the purified Q used in the epitaxial growth of a semi- conductor material such as indium phosphide. Alternatively, in a process for the epitaxial growth of a semiconductor compound of Q in molten Q, X can be removed in situ by the addition of a suitable element of the M-type.

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