Semiconductor memory

Details Semiconductor memory Semiconductor memory

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G11C 11/24 (2006.01) G11C 11/404 (2006.01) G11C 16/04 (2006.01) G11C 17/00 (2006.01) H01L 29/788 (2006.01)

Patent

CA 1218151

- 1 - Abstract: A semiconductor memory is made up of semiconductor memory cells each consisting of a transistor of an MOS structure which has a charge-storage layer and is formed on a semiconductor substrate. The improvement resides in the fact that a switching element is provided so that positive or negative charge can be stored in and discharged from the charge-storage layer in the mode for writing data and the charge-storage layer can be allowed to float electrically when in the mode for reading data. The result enables scaling-down while avoiding the disadvantages of a typical DRAM memory cell.

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