G - Physics – 11 – C
Patent
G - Physics
11
C
352/81, 352/82
G11C 11/40 (2006.01) G11C 7/00 (2006.01) G11C 11/411 (2006.01)
Patent
CA 1226674
ABSTRACT A semiconductor memory cell includes cross coupled bipolar transistors operated in the forward current mode with power fed to the base of the transistor through Schottky diodes from separate word lines. Bit lines are connected to the transistors' emitters and a high differential current is sensed between the bit lines during read operations. No resistors are included within the cell.
471834
Honeywell Inc.
Smart & Biggar
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