Semiconductor memory cell device

Details Semiconductor memory cell device Semiconductor memory cell device

G - Physics

11

C

356/162

G11C 11/34 (2006.01) G11C 11/404 (2006.01) H01L 21/762 (2006.01) H01L 27/04 (2006.01) H01L 27/108 (2006.01)

Patent

CA 1171554

PHN 9904 14 9-6-1981 ABSTRACT: "Semiconductor device". In a dynamic memory cell the mutual cross-talk is considerably reduced by providing a diffused selection line (12) below a layer of thick oxide (4) (for example, LOCOS). As a result of this the capacitive coupling with other selection lines (13) is considerably reduced as well as the capacity of the selection line (12) with respect to channel stopping regions (14) provided between the memory cells.

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