G - Physics – 01 – R
Patent
G - Physics
01
R
324/58.1
G01R 31/30 (2006.01) G01R 31/28 (2006.01) G11C 29/50 (2006.01)
Patent
CA 1184248
SEMICONDUCTOR MEMORY CELL MARGIN TEST CIRCUIT ABSTRACT OF THE DISCLOSURE A margin test circuit (10) is provided for a semiconductor memory circuit having a plurality of memory cells (16). Each of the memory cells (16) in one row of cells (16) are interconnected to a word line (14). The margin test circuit (10) further includes a row decoder/driver (12) which receives a variable voltage (Vcc*) for changing the signal level stored within a memory cell (16) to thereby determine the marginal voltage level at which the memory cell (16) will maintain storage of a signal level. The variable voltage (Vcc*) is the semiconductor memory circuit main supply source (Vcc) in normal operation but can be forced to a different voltage during the margin test.
395312
O'toole James E.
Proebsting Robert J.
Mostek Corporation
Smart & Biggar
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