H - Electricity – 01 – L
Patent
H - Electricity
01
L
356/25
H01L 27/108 (2006.01) H01L 21/82 (2006.01) H01L 21/8242 (2006.01) H01L 29/94 (2006.01)
Patent
CA 1294713
ABSTRACT In a three-dimensional, one-transistor cell arrangement for dynamic semiconductor memories, whereby the capacitor for the charges to be stored is fashioned as a trench capacitor in the substrate and, separated by an insulating layer, is arranged under the selection transistor comprising an insulated gate electrode and is connected to the source/drain zone thereof in electrically conductive fashion, and whereby the source/drain zones of the selection transistor are contained in a recrystallized silicon layer applied above the insulating layer, the electrically conductive contact -to the capacitor is formed by an asymmetrical trench expansion introduced into the substrate in the upper part of the trench, this asymmetrical trench expansion being filled with polycrystalline silicon having the same doping as in the trench, and the source/drain zones are produced such by ion implantation in the recrystallized silicon layer that the source zone overlaps the electrically conductive contact in the asymmetrical trench expansion. The memory cell arrangement of the present invention enables an extremely compact memory cell having an area of less than 3/µm2, enabling this on the basis of simple process steps; the invention can be employed in the manufacture of 64 megabit DRAMs.
583983
Gotzlich Josef
Kircher Roland
Aktiengesellschaft Siemens
Fetherstonhaugh & Co.
LandOfFree
Semiconductor memory comprising trench capacitor does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Semiconductor memory comprising trench capacitor, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor memory comprising trench capacitor will most certainly appreciate the feedback.
Profile ID: LFCA-PAI-O-1210184