G - Physics – 11 – C
Patent
G - Physics
11
C
352/82.4
G11C 11/34 (2006.01) G05F 3/20 (2006.01) G11C 5/00 (2006.01) G11C 11/404 (2006.01) G11C 11/4074 (2006.01) H01L 27/108 (2006.01)
Patent
CA 1137221
TITLE OF THE INVENTION: Semiconductor Memory Device ABSTRACT OF THE DISCLOSURE: A semiconductor memory device in which MIS capacitors, each of which functions as a memory or storage cell, and a circuit for stepping up a power supply voltage are formed on a single semiconductor substrate. A stepped-up voltage is applied to an electrode of the capacitor. - 1 -
370042
Inoue Junichi
Mano Tsuneo
Watanabe Takashi
Gowling Lafleur Henderson Llp
Nippon Telegraph & Telephone Public Corporation
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