G - Physics – 02 – B
Patent
G - Physics
02
B
345/56, 88/97.4
G02B 26/00 (2006.01) G02F 1/00 (2006.01) G02F 1/017 (2006.01) G02F 3/00 (2006.01)
Patent
CA 2017971
A semiconductor multiple quantum well mesa structure, for use as the optically active element in an optical logic or an optically controlled optical switching device, has its side surfaces implanted with surface recombination centers, whereby the optical switching speed is increased.
Structure mesa à puits quantique multiple à semiconducteur utilisée comme élément actif optique dans un dispositif de commutation optique à logique optique ou commandé optiquement, dont les surfaces latérales comportent des centres de recombinaison, grâce auxquels la vitesse de commutation optique est accrue.
Mccall Samuel Leverte Jr.
Tai Kuochou
American Telephone And Telegraph Company
Kirby Eades Gale Baker
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