H - Electricity – 01 – L
Patent
H - Electricity
01
L
H01L 23/42 (2006.01) H01L 23/34 (2006.01) H01L 23/36 (2006.01) H01L 23/373 (2006.01) H01L 23/40 (2006.01) H01L 23/492 (2006.01)
Patent
CA 2087799
ABSTRACT The present invention relates to semiconductor modules with high levels of power dissipation, in which an electrically insulating and thermally conductive layer (ISO2) that is of crystalline carbon is incorporated between a semiconductor chip (CHIP2) and a thermal abstraction device (W2), the semiconductor chip, the insulating layer, and the thermal abstraction device being connected through an intermediate layer (Z2) and through connecting layers (V21 ... V23) that are of silver, by means of pressure sintering. As an alternative to the layer of crystalline carbon, for low voltage applications it is also possible to use a layer of amorphous carbon. The advantage of the present invention is primarily in the very low thermal transition resistance between the semiconductor chip and the thermal abstraction device. Figure 2.
Kuhnert Reinhold
Wolfgang Eckhard
Aktiengesellschaft Siemens
Fetherstonhaugh & Co.
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