Semiconductor multiple quantum well mach-zehnder optical...

Details Semiconductor multiple quantum well mach-zehnder optical... Semiconductor multiple quantum well mach-zehnder optical...

G - Physics

02

F

G02F 1/025 (2006.01) G02F 1/017 (2006.01) G02F 1/225 (2006.01) G02B 6/12 (2006.01) G02F 1/21 (2006.01)

Patent

CA 2139193

A Mach-Zehnder type optical modulator having a ridge structure including a multiple quantum well wave guide layer expending both in a passive region and in an active phase modulation region on which an electrical field is applied, wherein the wave guide layer is selectively grown by a metal organic vapor phase epitaxy with use of dielectric stripe mask patterns having a large width in the active phase modulation region and a small width in the passive region so that the wave guide layer has a band gap wavelength equal to or near a wavelength of an incidental light in the active phase modulation region and a smaller band gap wavelength smaller than the wavelength of the incidental light in the passive region.

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