C - Chemistry – Metallurgy – 30 – B
Patent
C - Chemistry, Metallurgy
30
B
C30B 29/10 (2006.01) C04B 41/46 (2006.01) C09K 11/00 (2006.01) D02G 3/00 (2006.01) G01N 33/543 (2006.01) G09G 3/34 (2006.01) H01L 31/00 (2006.01)
Patent
CA 2495309
A semiconductor nanocrystal heterostructure has a core of a first semiconductor material surrounded by an overcoating of a second semiconductor material. Upon excitation, one carrier can be substantially confined to the core and the other carrier can be substantially confined to the overcoating.
Cette invention se rapporte à une hétérostructure de nanocristaux de semi-conducteur, qui possède un noyau d'un premier matériau semi-conducteur entouré par une surcouche d'un second matériau semi-conducteur. Après excitation, l'un des porteurs peut être essentiellement confiné au noyau et l'autre peut être essentiellement confiné à la surcouche.
Bawendi Moungi G.
Kim Sungjee
Massachusetts Institute Of Technology
Norton Rose Or S.e.n.c.r.l. S.r.l./llp
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