Semiconductor non-volatile memory device

Details Semiconductor non-volatile memory device Semiconductor non-volatile memory device

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G11C 27/00 (2006.01) G11C 16/04 (2006.01) H01L 27/115 (2006.01) H01L 27/12 (2006.01) H01L 29/786 (2006.01) H01L 29/788 (2006.01)

Patent

CA 1139880

SEMICONDUCTOR NON-VOLATILE MEMORY DEVICE ABSTRACT OF THE DISCLOSURE A semiconductor non-volatile memory device comprising: (a) a memory transistor which has: a first source region and a first drain region and a first channel region which is formed between said first source and drain regions in a substrate; a first insulation region formed on said first channel region; a floating gate formed on said first insulation film, and; a first impurity region which is formed contiguous with said drain region adjacent to an end of said floating gate, and which has electric conduc- tivity of the type opposite to that of said first drain region; (b) a switching transistor which has: a second source region, a second drain region and a second channel region which is formed between said second source and drain source regions in a substrate, a second insulation film formed on said second channel region, and, a gate electrode formed on said second insulation film, and; (c) wiring means which connects said first impurity region of said memory transistor to said second drain region of said switching transistor. When information is being written, said switching transistor keeps said first impurity region in a ground skate, and when information is being read, said switching transistor keeps said impurity region in an electrically floating state.

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