G - Physics – 02 – F
Patent
G - Physics
02
F
G02F 1/025 (2006.01) G02F 1/313 (2006.01) H01S 5/026 (2006.01) H01S 5/20 (2006.01) H01S 5/50 (2006.01)
Patent
CA 2101066
2101066 9310478 PCTABS00022 A process for manufacturing a semiconductor optical part in which a ridge type semiconductor optical amplifier section and a ridge type semiconductor optical waveguide connected to the optical amplifier section are integrally formed on a single substrate. The semiconductor optical amplifier section has a path width narrower than that of the semiconductor optical waveguide. The current density of the semiconductor optical part thus manufactured can be high since the injected current in the semiconductor optical amplifier can be much constricted. Therefore, optical amplification of a high efficiency can be performed even in the case of a small injected current, and the semiconductor optical part is useful as an optical amplifier of a high efficiency.
Ono Takahiro
Yanagawa Hisaharu
Smart & Biggar
The Furukawa Electric Co. Ltd.
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