H - Electricity – 01 – S
Patent
H - Electricity
01
S
345/32, 345/56
H01S 3/07 (2006.01) G02F 1/00 (2006.01) G02F 1/017 (2006.01) H01L 31/0352 (2006.01) H01L 33/00 (2006.01) H01S 5/062 (2006.01) H01S 5/227 (2006.01) H01S 5/34 (2006.01) H01S 5/12 (2006.01) H01S 5/125 (2006.01) H01S 5/20 (2006.01) H01S 5/32 (2006.01) H01S 5/343 (2006.01)
Patent
CA 2017912
Abstract: The present invention relates to an improvement for a semiconductor optical device having a region in which semiconductor or carriers in the semiconductor and light interact. For example, an active region for a semiconductor laser, an optical wave guide region of an optical modulator, etc. has a quantum well structure comprising a well region and a barrier region. A semiconductor optical device is disclosed which greatly improves the degree of freedom for the design of the device such as the thickness and the selection of material without deteriorating the quantum effect. This is achieved by introducing a super lattice super-layer structure into the barrier region of the quantum well structure or defining the strain for the well region and the barrier region.
Chinone Naoki
Ohtoshi Tsukuru
Sasaki Shinji
Tsuchiya Tomonobu
Uomi Kazuhisa
Hitachi Ltd.
Kirby Eades Gale Baker
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