Semiconductor optical device

Details Semiconductor optical device Semiconductor optical device

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H01S 5/34 (2006.01) G02B 6/122 (2006.01) H01S 5/0625 (2006.01) H01S 5/026 (2006.01) H01S 5/10 (2006.01) H01S 5/12 (2006.01) H01S 5/14 (2006.01) H01S 5/227 (2006.01)

Patent

CA 2007383

A semiconductor optical device in which an optical waveguide is provided on a semiconductor substrate comprises a strained-layer superlattice, whereby to show an extremely small transmission loss. A semiconductor optical device with further improved characteristics is obtainable by using a strained-layer superlattice for a portion required to show a great change in refractive index, such as an optical crosspoint switch portion, as well as for the optical waveguide. The strained-layer superlattice comprises a first semiconductor layer and a second semiconductor layer having a narrower band gap and a greater lattice constant as compared with the first semiconductor layer, the two layers being grown alternately.

L'invention est un dispositif optique à semi-conducteur dans lequel un guide de lumière est construit sur un substrat semi-conducteur. Ce dispositif comprend un superréseau de couches tendues ayant un affaiblissement de transmission très faible. On peut obtenir un dispositif optique ayant de meilleures caractéristiques encore en utilisant un superréseau de couches tendues dans une partie où l'indice de réfraction doit varier considérablement, tel qu'un point de croisement, ainsi que pour le guide de lumière. Ce superréseau comprend une première couche semi-conductrice, ainsi qu'une seconde couche semi-conductrice ayant une bande interdite plus étroite et une constante de réseau plus grande que celles de la première couche, ces deux couches étant obtenues par croissance l'une après l'autre.

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