H - Electricity – 01 – S
Patent
H - Electricity
01
S
H01S 5/026 (2006.01) G02B 6/12 (2006.01) G02F 1/01 (2006.01) H01L 21/02 (2006.01)
Patent
CA 2369831
A monolithic semiconductor optical device with excellent temperature and modulation characteristics and associated method of manufacturing whereby the device has a semiconductor substrate, a semi-insulating buried heterostructure GaInAsP-based DFB laser; and either a buried ridge type AlGaInAs-based EA or a self aligned structure (SAS) AlGaInAs-based EA modulator.
Arakawa Satoshi
Ikeda Nariaki
Kurobe Tatsuto
Yamaguchi Takeharu
Smart & Biggar
The Furukawa Electric Co. Ltd
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