Semiconductor optical device having a compound semiconductor...

Details Semiconductor optical device having a compound semiconductor... Semiconductor optical device having a compound semiconductor...

H - Electricity

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H01S 5/223 (2006.01) H01L 21/20 (2006.01) H01S 5/343 (2006.01) H01S 5/20 (2006.01) H01S 5/22 (2006.01) H01S 5/227 (2006.01)

Patent

CA 2326860

A selective growth process for depositing a compound semiconductor layer including Al includes the step of introducing a mixture of source gas for the compound semiconductor layer and halogen compound gas including carbon and halogen. The halogen compound gas suppresses deposition of polycrystalline substance and allows a higher growth rate at a lower temperature. The process is applied to burying process, selective area growth process and butt joint growth process.

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