Semiconductor optical device having reduced parasitic...

Details Semiconductor optical device having reduced parasitic... Semiconductor optical device having reduced parasitic...

G - Physics

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G02B 6/12 (2006.01) G02B 6/13 (2006.01) G02F 1/025 (2006.01) H01S 5/22 (2006.01) G02F 1/017 (2006.01) H01S 5/026 (2006.01) H01S 5/028 (2006.01) H01S 5/227 (2006.01)

Patent

CA 2356176

A semiconductor optical device includes a mesa stripe having a layer structure, a pair of current blocking layers abutting and covering respective sides of the mesa stripe, a pair of Al-oxidized layers each covering one of the current blocking layers, a p-side electrode in contact with the top surface of the mesa stripe through the opening formed between the Al-oxidized layers.

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