Semiconductor optical device with mesa structure which is...

Details Semiconductor optical device with mesa structure which is... Semiconductor optical device with mesa structure which is...

H - Electricity

01

S

H01S 5/227 (2006.01) G02F 1/025 (2006.01) H01S 5/10 (2006.01) H01S 5/22 (2006.01) H01S 5/32 (2006.01) H01S 5/343 (2006.01) H01S 5/50 (2006.01) H01S 3/18 (1990.01)

Patent

CA 2129074

ABSTRACT OF THE DISCLOSURE A semiconductor mesa structure including active, absorbing, or passive guide layer is surrounding laterally by insulating mask, and is buried by a cladding layer which extends over the insulating mask, and injected current flows through the cladding layer into the mesa structure without leakage from the cladding layer into a substrate so that the semiconductor optical device is improved in performance.

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