Semiconductor optical functional device

Details Semiconductor optical functional device Semiconductor optical functional device

H - Electricity

01

L

H01L 31/06 (2006.01) G02F 1/017 (2006.01) G02F 1/313 (2006.01)

Patent

CA 2046575

Provided as an optical functional device which comprises a substrate, a lower cladding layer, a waveguide layer, and an upper cladding layer each formed of a semiconductor, and in which at least one of the three layers except the substrate has a quantum well structure at a quantum confined potential. The well plane of the quantum well structure is symmetrical with respect to the center position thereof, and varies in proportion to the square of the distance from the center position. If an electric field is applied perpendicular to the well plane , the respective changes in the absorption coefficient and refractive index in the vicinity of the absorption edge are influenced by absorption peak shifts attributable to both 1e-1hh and 1e-11h transitions. Thus, the optical functional device operates in response to both TE and TM mode light without depending on polarization.

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