Semiconductor optical image sensing device

Details Semiconductor optical image sensing device Semiconductor optical image sensing device

H - Electricity

04

N

345/1, 350/40

H04N 3/14 (2006.01) H01L 27/146 (2006.01) H03K 3/42 (2006.01) H04N 5/217 (2006.01)

Patent

CA 1080345

ABSTRACT OF THE DISCLOSURE A semiconductor optical image sensing device having a signal line connected to drain electrodes of MOS field effect transistors each corresponding to a picture element, wherein source electrodes of the MOS field effect transistors are connected to photo-diodes, capacitors of MOS structures are connected between gate electrodes of the MOS field effect transistors and a noise line, and the signal line and the noise line are connected to input terminals of a differen- tial amplifier. The capacitors of MOS structures are formed in the same way as the gates and drains of the MOS field effect transistors. By applying a scanning pulse to the gate electrodes of the MOS field effect transistors to scan the MOS field effect transistors for switching the same, a signal output and a noise output are produced from the signal line while another noise output is produced from the noise line. Signal to noise ratio can be enhanced by producing only the signal output from the differential amplifier.

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