G - Physics – 02 – B
Patent
G - Physics
02
B
G02B 26/00 (2006.01) B81B 7/02 (2006.01) H01L 29/06 (2006.01)
Patent
CA 2400768
The invention concerns an optoelectronic device comprising at alternation of at least three semiconductor layers (1-3) with selected shape, and two air layers. The semiconductor layers (1-3) having N-type or P-type doping which may differ or not from one layer to the next layer, are separated by spacers (8, 9) whereof the doping is non-intentional (I-type) or intentional (N-type or P-type) to define a PINIP or NIPIN structure with air cavities (10-1, 10-2), and are adapted to be set at selected respective electric potentials. The respective thicknesses and compositions of the layers (1-3) and the spacers are selected so that the structure has at least an optical transfer function adapted to light to be treated and adjustable in accordance with the selected potentials applied to the semiconductor layers.
Un dispositif optoélectronique comprend une alternance d'au moins trois couches semiconductrices (1-3) de forme choisie et deux couches d'air. Les couches semiconductrices (1-3) présentent des dopages de type "N" ou "P" qui different ou non d'une couche à la couche voisine, sont séparées par des espaceurs (8, 9) dont le dopage est non intentionnel (de type "I") ou inten-tionnel (de type N ou P) pour définir une structure PINIP ou NIPIN à cavités d'air (10-1, 10-2), et sont propres à être placées à des potentiels electriques respectifs choisis. Les épaisseurs et compositions respectives des couches (1-3) et espaceurs sont choisies de sorte que la structure présente au moins une fonction de transfert optique adaptée à la lumière à traiter et modulable en fonction des potentiels choisis appliqués aux couches semiconductrices.
Garrigues Michel
Leclercq Jean-Louis
Seassal Christian
Spisser Alain
Viktorovitch Pierre
Centre National de La Recherche Scientifique
Ecole Centrale de Lyon
Ogilvy Renault Llp/s.e.n.c.r.l.,s.r.l.
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