H - Electricity – 01 – L
Patent
H - Electricity
01
L
345/26
H01L 31/07 (2006.01) H01L 31/0304 (2006.01) H01L 31/107 (2006.01) H01L 31/18 (2006.01)
Patent
CA 2007670
Abstract of the Disclosure Disclosed are an avalanche photodiode and a manufacturing method thereof. An n?-type InGaAs light absorption layer and n?-type InP window layer are formed on an n-type InP substrate by crystal growth, in the order mentioned. A depression is formed in a selected surface portion of the window layer, and n-type impurities are doped into the bottom of the depression, to thereby form an n-type high concentration region. Further, n?-type crystal- grown InP layer is formed in the depression in such a way as to fill the depression. A guard ring is formed around the depression by the doping of p-type impuri- ties. By doping p-type impurities into the window layer, a p-type high concentration region is formed in the window layer in a manner completely surrounding the interface between the n-type high concentration region and the crystal-grown InP layer. The n-type and p-type high concentration regions define a junction serving as a light-receiving region. Since the inter- face of the crystal-grown InP layer, which may not have a satisfactory crystalline structure, is located within the p-type high concentration region, that interface is not supplied with a high electric field during use. Accordingly, the performance of the avalanche photodiode is not influenced by the interface.
Matsumoto Kenji
Morinaga Motoyasu
Sadamasa Tetsuo
Suzuki Nobuo
Takaoka Keiji
Kabushiki Kaisha Toshiba
Marks & Clerk
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