Semiconductor plasma oxidation

B - Operations – Transporting – 05 – D

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356/148

B05D 3/06 (2006.01) C23C 8/36 (2006.01) H01L 21/316 (2006.01)

Patent

CA 1124409

SEMICONDUCTOR PLASMA OXIDATION Abstract Uniform growth of oxide at low temperature can be performed in a plasma environment by positioning the substrates on which the oxide is to grow outside of the plasma area and independently supplying heat to the substrates in the presence of controlled oxygen pressure. YO979-007

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