C - Chemistry – Metallurgy – 08 – F
Patent
C - Chemistry, Metallurgy
08
F
C08F 210/02 (2006.01) C08F 218/08 (2006.01) C08K 3/04 (2006.01) C08K 3/22 (2006.01) C08K 5/098 (2006.01) H01L 21/18 (2006.01)
Patent
CA 2100052
The method of making a semiconductor polymeric compound includes an "A" phase consisting of preparing a mixture of a polymeric matric consisting essentially of about 60% by weight low density polyethylene and about 8.5% by weight ethylene vinyl acetate based on a total amount of the polymeric compound to be prepared with about 20% by weight of a conductive lampblack with a porous structure and about 4.0% by weight of a spreading agent consisting of calcium stearate, about 3 by weight of an antioxidant, and about 0.5% of a coupling agent consisting of calcium titanate; and a "B" phase including incorporating the conductive component in the polymeric matrix by the steps of spreading the mixture using "bamburg" type intermittent mixers under process conditions to obtain a high rate of lampblack shearing and homogenizing of a sheared lampblack and spreading and coupling agent portion. A semiconductor body according to the invention is made by extruding and calendering the semiconductor polymeric compound with lampblack aggregations having a high degree of shearing and low degree of orientation.
Da Costa Olavo Nunes
Kadooka Humberto Takashi
Moreno Ricardo Proveda
Cassan Maclean
Metagal Industria E. Comercio Ltda.
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