Semiconductor processing involving ion implantation

Details Semiconductor processing involving ion implantation Semiconductor processing involving ion implantation

H - Electricity

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356/163

H01L 21/425 (2006.01) H01L 21/203 (2006.01) H01L 21/265 (2006.01)

Patent

CA 1167982

- 9 - SEMICONDUCTOR PROCESSING INVOLVING ION IMPLANTATION Abstract of the Disclosure A molecular beam epitaxial method of fabricating a semiconductor device is disclosed wherein the dopant is implanted by establishing a plasma containing ions of the dopant and the ions are coupled through a drift chamber to impinge on the growing substrate surface. The plasma formed in the ion gun has ions of boron and arsenic and therefore the dopants selected for implantation can be determined by setting a mass filter present in the ion gun. A change to the dopant of the opposite conductivity type can be accomplished in seconds by simply readjusting the mass filter in the ion gun.

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