G - Physics – 02 – F
Patent
G - Physics
02
F
88/0.1, 88/97.5
G02F 1/225 (2006.01) G02B 6/30 (2006.01) G02B 6/34 (2006.01) G02B 6/42 (2006.01) H01S 5/125 (2006.01) H01S 5/42 (2006.01) H01S 5/062 (2006.01)
Patent
CA 2014904
A first array of laser diode devices are optically coupled by a diffraction grating comprising a plurality of spaced diffraction nodules in a grid array optically coupled to the devices. The light emitted from a device of the first array can pass through the grid array to a second device, reflect back to the emitting device in a Distributed Bragg Reflector (DBR) mode and deflect orthogonal to the emitted light optical axis to a third device in a Distributed Bragg Deflector (DBD) mode. The light from the second and third devices can be coupled to other laser diode devices by still further diffraction nodule arrays to produce phased-locked beams, beam steering of portions of the light and other effects.
Evans Gary Alan
Kirk Jay Bernard
Company General Electric
Craig Wilson And Company
LandOfFree
Semiconductor radiation coupling system does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Semiconductor radiation coupling system, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor radiation coupling system will most certainly appreciate the feedback.
Profile ID: LFCA-PAI-O-1409436