Semiconductor sensor

Details Semiconductor sensor Semiconductor sensor

H - Electricity

01

L

H01L 27/20 (2006.01) G01L 9/00 (2006.01) H01L 27/085 (2006.01)

Patent

CA 2067180

The invention relates to field effect semiconductors sensors. The sensor according to the invention is comprised of a ring oscillator (3) consisting of an odd number of CMOS reversers and arranged in an area (2) which is sensitive to the physical magnitude to be measured. In order to increase the sensitivity of the sensor, for each CMOS reverser, the channel n of the NMOS transistor is arranged perpendicularly to the channel p of the PMOS transistor.

L'invention concerne les capteurs à semi-conducteurs à effet de champ. Le capteur selon l'invention comprend un oscillateur en anneau (3) formé à partir d'un nombre impair d'inverseurs CMOS et disposé dans une zone sensible (2) à la grandeur physique que l'on désire mesurer. Afin d'augmenter la sensibilité du capteur, on dispose pour chaque inverseur CMOS le canal n du transistor NMOS perpendiculairement au canal p du transistor PMOS.

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