Semiconductor stack and power converter using the same

Details Semiconductor stack and power converter using the same Semiconductor stack and power converter using the same

H - Electricity

02

M

H02M 7/48 (2007.01)

Patent

CA 2751034

A semiconductor stack (1) has a multilayer substrate (2), a plurality of semiconductor modules (3), a plurality of electrolytic capacitors, a plurality of fuses (5) and a cooling fin (6). In the multilayer substrate (2), a P-phase conductor substrate (21), a C-phase conductor substrate (22) and an N-phase conductor substrate overlap each other, with insulating substrates (24b, 24c) in between. The semiconductor modules (3a-3h) are arranged in a row on the rear surface of the multilayer substrate (2). The electrolytic capacitors (4a-4m) are arranged in a row parallel to the row of the semiconductor module on the rear surface of the multilayer substrate (2). The fuses (5a-5m) are arranged on the front surface of the multilayer substrate (2).

L'invention porte sur un empilement de semi-conducteurs (1) qui comprend un substrat multicouche (2), une pluralité de modules à semi-conducteurs (3), une pluralité de condensateurs électrolytiques, une pluralité de fusibles (5) et une ailette de refroidissement (6). Dans le substrat multicouche (2), un substrat conducteur de phase P (21), un substrat conducteur de phase C (22) et un substrat conducteur de phase N se chevauchent, avec des substrats isolants (24b, 24c) intermédiaires. Les modules à semi-conducteurs (3a-3h) sont disposés en rang sur la surface arrière du substrat multicouche (2). Les condensateurs électrolytiques (4a-4m) sont disposés en rang parallèlement au rang des modules à semi-conducteurs sur la surface arrière du substrat multicouche (2). Les fusibles (5a-5m) sont disposés sur la surface avant du substrat multicouche (2).

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