Semiconductor structure and devices and methods of making same

Details Semiconductor structure and devices and methods of making same Semiconductor structure and devices and methods of making same

H - Electricity

01

S

356/151, 345/32

H01S 5/24 (2006.01) H01S 5/22 (2006.01) H01L 33/00 (2006.01)

Patent

CA 1256550

SEMICONDUCTOR STRUCTURE AND DEVICES AND METHODS OF MAKING SAME ABSTRACT OF THE DISCLOSURE Semiconductor devices such as lasers which include a substrate with a channel therein with a clad layer overlying the substrate and filling the channel exhibit irregularities such as terraces in the surface of the clad layer which are detrimental to device performance. These irregularities are substantially eliminated by forming the channel (14) in a surface (12) of a buffer layer (10) greater than about 4 micrometers thick on the substrate (4) and forming the clad layer (16) over the buffer layer (10) and the channel (14). CW lasers incorporating the principles of the invention exhibit the highest output power in a single spatial mode and maximum output power which have been observed to date.

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