Semiconductor structure with improved phosphosilicate glass...

Details Semiconductor structure with improved phosphosilicate glass... Semiconductor structure with improved phosphosilicate glass...

H - Electricity

01

L

356/162

H01L 21/225 (2006.01) H01L 21/3105 (2006.01) H01L 21/321 (2006.01) H01L 21/8234 (2006.01)

Patent

CA 1115856

Abstract In a field effect device such as a charge coupled device or field effect transistor in which at least two levels of polycrystalline silicon conductors are used; these two levels of polycrystalline silicon are isolated from one another with a dielectric layer. Disclosed is a dielectric layer of reflowed phos- phosilicate glass (PSG) on top surface of a poly- crystalline silicon layer which may be doped by phosphorous impurities diffusing from PSG.

322415

Affiliated with

Also associated with

Rating

Semiconductor structure with improved phosphosilicate glass... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Semiconductor structure with improved phosphosilicate glass..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor structure with improved phosphosilicate glass... will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFCA-PAI-O-1076762